Sputtering of Xe+ on Si(pc) at 300 K
Sputtering of Xe+ on Si(pc) at 300 K
angle = 0.0 deg | E /eV | P |
---|---|---|
45.15 | 0.0 | |
52.84 | 8.352e-05 | |
61.83 | 0.0003461 | |
72.36 | 0.0008979 | |
84.68 | 0.001924 | |
99.09 | 0.003711 | |
116.0 | 0.006689 | |
135.7 | 0.01149 | |
158.8 | 0.01899 | |
185.8 | 0.03036 | |
217.5 | 0.04706 | |
254.5 | 0.07076 | |
297.8 | 0.1031 | |
348.5 | 0.1452 | |
407.8 | 0.1976 | |
477.3 | 0.2598 | |
558.5 | 0.3302 | |
653.6 | 0.4066 | |
764.8 | 0.487 | |
895.0 | 0.5696 | |
1047.0 | 0.6533 | |
1226.0 | 0.7374 | |
1434.0 | 0.8218 | |
1679.0 | 0.9069 | |
1964.0 | 0.9928 | |
2299.0 | 1.08 | |
2690.0 | 1.169 | |
3148.0 | 1.26 | |
3684.0 | 1.353 | |
4311.0 | 1.447 | |
5045.0 | 1.545 | |
5903.0 | 1.643 | |
6908.0 | 1.744 | |
8084.0 | 1.847 | |
9461.0 | 1.95 | |
11070.0 | 2.054 | |
12960.0 | 2.159 | |
15160.0 | 2.263 | |
17740.0 | 2.366 | |
20760.0 | 2.468 | |
24300.0 | 2.568 | |
28430.0 | 2.665 | |
33270.0 | 2.758 | |
38940.0 | 2.847 | |
45570.0 | 2.931 | |
53320.0 | 3.008 | |
62400.0 | 3.079 | |
73020.0 | 3.142 | |
85450.0 | 3.196 |
E = 45.15 – 100000