{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "Xe+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
------------------------------------------------------------------------
Sputtering of Xe+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.3076, "q": 8.452, "mu": 1.634, "epsilonL": 1.692e-06, "Eth": 45.15}, "E_min": 45.15, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
45.15	0.0	
52.84	8.352e-05	
61.83	0.0003461	
72.36	0.0008979	
84.68	0.001924	
99.09	0.003711	
116.0	0.006689	
135.7	0.01149	
158.8	0.01899	
185.8	0.03036	
217.5	0.04706	
254.5	0.07076	
297.8	0.1031	
348.5	0.1452	
407.8	0.1976	
477.3	0.2598	
558.5	0.3302	
653.6	0.4066	
764.8	0.487	
895.0	0.5696	
1047.0	0.6533	
1226.0	0.7374	
1434.0	0.8218	
1679.0	0.9069	
1964.0	0.9928	
2299.0	1.08	
2690.0	1.169	
3148.0	1.26	
3684.0	1.353	
4311.0	1.447	
5045.0	1.545	
5903.0	1.643	
6908.0	1.744	
8084.0	1.847	
9461.0	1.95	
11070.0	2.054	
12960.0	2.159	
15160.0	2.263	
17740.0	2.366	
20760.0	2.468	
24300.0	2.568	
28430.0	2.665	
33270.0	2.758	
38940.0	2.847	
45570.0	2.931	
53320.0	3.008	
62400.0	3.079	
73020.0	3.142	
85450.0	3.196	
-----