Sputtering of 4He+ on Si(pc) at 300 K
Sputtering of 4He+ on Si(pc) at 300 K
| angle = 0.0 deg | E /eV | P |
|---|---|---|
| 18.9 | 3.454e-26 | |
| 22.51 | 0.0004093 | |
| 26.82 | 0.00151 | |
| 31.95 | 0.003591 | |
| 38.05 | 0.007017 | |
| 45.33 | 0.01209 | |
| 54.0 | 0.01887 | |
| 64.32 | 0.02707 | |
| 76.62 | 0.03605 | |
| 91.28 | 0.04504 | |
| 108.7 | 0.05341 | |
| 129.5 | 0.06082 | |
| 154.3 | 0.06715 | |
| 183.8 | 0.07245 | |
| 218.9 | 0.07686 | |
| 260.8 | 0.0805 | |
| 310.7 | 0.08349 | |
| 370.1 | 0.08589 | |
| 440.8 | 0.08776 | |
| 525.1 | 0.08913 | |
| 625.5 | 0.09002 | |
| 745.2 | 0.09041 | |
| 887.7 | 0.09032 | |
| 1057.0 | 0.08973 | |
| 1260.0 | 0.08865 | |
| 1500.0 | 0.08708 | |
| 1787.0 | 0.08504 | |
| 2129.0 | 0.08254 | |
| 2536.0 | 0.07964 | |
| 3021.0 | 0.07637 | |
| 3599.0 | 0.07278 | |
| 4287.0 | 0.06894 | |
| 5107.0 | 0.06492 | |
| 6083.0 | 0.06077 | |
| 7247.0 | 0.05657 | |
| 8632.0 | 0.05237 | |
| 10280.0 | 0.04824 | |
| 12250.0 | 0.04421 | |
| 14590.0 | 0.04033 | |
| 17380.0 | 0.03662 | |
| 20710.0 | 0.03313 | |
| 24660.0 | 0.02985 | |
| 29380.0 | 0.02679 | |
| 35000.0 | 0.02397 | |
| 41690.0 | 0.02138 | |
| 49660.0 | 0.01902 | |
| 59160.0 | 0.01687 | |
| 70470.0 | 0.01492 | |
| 83950.0 | 0.01317 |
E = 18.9 – 100000