Sputtering of 4He+ on Si(pc) at 300 K
Sputtering of 4He+ on Si(pc) at 300 K
angle = 0.0 deg | E /eV | P |
---|---|---|
18.9 | 3.454e-26 | |
22.51 | 0.0004093 | |
26.82 | 0.00151 | |
31.95 | 0.003591 | |
38.05 | 0.007017 | |
45.33 | 0.01209 | |
54.0 | 0.01887 | |
64.32 | 0.02707 | |
76.62 | 0.03605 | |
91.28 | 0.04504 | |
108.7 | 0.05341 | |
129.5 | 0.06082 | |
154.3 | 0.06715 | |
183.8 | 0.07245 | |
218.9 | 0.07686 | |
260.8 | 0.0805 | |
310.7 | 0.08349 | |
370.1 | 0.08589 | |
440.8 | 0.08776 | |
525.1 | 0.08913 | |
625.5 | 0.09002 | |
745.2 | 0.09041 | |
887.7 | 0.09032 | |
1057.0 | 0.08973 | |
1260.0 | 0.08865 | |
1500.0 | 0.08708 | |
1787.0 | 0.08504 | |
2129.0 | 0.08254 | |
2536.0 | 0.07964 | |
3021.0 | 0.07637 | |
3599.0 | 0.07278 | |
4287.0 | 0.06894 | |
5107.0 | 0.06492 | |
6083.0 | 0.06077 | |
7247.0 | 0.05657 | |
8632.0 | 0.05237 | |
10280.0 | 0.04824 | |
12250.0 | 0.04421 | |
14590.0 | 0.04033 | |
17380.0 | 0.03662 | |
20710.0 | 0.03313 | |
24660.0 | 0.02985 | |
29380.0 | 0.02679 | |
35000.0 | 0.02397 | |
41690.0 | 0.02138 | |
49660.0 | 0.01902 | |
59160.0 | 0.01687 | |
70470.0 | 0.01492 | |
83950.0 | 0.01317 |
E = 18.9 – 100000