{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "(4He)+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
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Sputtering of (4He)+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.2524, "q": 0.2319, "mu": 1.473, "epsilonL": 0.000374, "Eth": 18.9}, "E_min": 18.9, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
18.9	3.454e-26	
22.51	0.0004093	
26.82	0.00151	
31.95	0.003591	
38.05	0.007017	
45.33	0.01209	
54.0	0.01887	
64.32	0.02707	
76.62	0.03605	
91.28	0.04504	
108.7	0.05341	
129.5	0.06082	
154.3	0.06715	
183.8	0.07245	
218.9	0.07686	
260.8	0.0805	
310.7	0.08349	
370.1	0.08589	
440.8	0.08776	
525.1	0.08913	
625.5	0.09002	
745.2	0.09041	
887.7	0.09032	
1057.0	0.08973	
1260.0	0.08865	
1500.0	0.08708	
1787.0	0.08504	
2129.0	0.08254	
2536.0	0.07964	
3021.0	0.07637	
3599.0	0.07278	
4287.0	0.06894	
5107.0	0.06492	
6083.0	0.06077	
7247.0	0.05657	
8632.0	0.05237	
10280.0	0.04824	
12250.0	0.04421	
14590.0	0.04033	
17380.0	0.03662	
20710.0	0.03313	
24660.0	0.02985	
29380.0	0.02679	
35000.0	0.02397	
41690.0	0.02138	
49660.0	0.01902	
59160.0	0.01687	
70470.0	0.01492	
83950.0	0.01317	
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