Sputtering of T+ on Si(pc) at 300 K
Sputtering of T+ on Si(pc) at 300 K
| angle = 0.0 deg | E /eV | P |
|---|---|---|
| 21.3 | 0.0 | |
| 25.31 | 0.0005038 | |
| 30.07 | 0.0012 | |
| 35.74 | 0.002167 | |
| 42.47 | 0.003462 | |
| 50.47 | 0.00513 | |
| 59.97 | 0.007183 | |
| 71.26 | 0.009589 | |
| 84.68 | 0.01227 | |
| 100.6 | 0.0151 | |
| 119.6 | 0.01793 | |
| 142.1 | 0.02062 | |
| 168.9 | 0.02306 | |
| 200.7 | 0.02517 | |
| 238.4 | 0.02691 | |
| 283.3 | 0.02826 | |
| 336.7 | 0.02926 | |
| 400.1 | 0.0299 | |
| 475.5 | 0.03023 | |
| 565.0 | 0.03027 | |
| 671.4 | 0.03004 | |
| 797.8 | 0.02958 | |
| 948.1 | 0.0289 | |
| 1127.0 | 0.02804 | |
| 1339.0 | 0.02702 | |
| 1591.0 | 0.02586 | |
| 1890.0 | 0.02459 | |
| 2246.0 | 0.02324 | |
| 2670.0 | 0.02183 | |
| 3172.0 | 0.02039 | |
| 3770.0 | 0.01894 | |
| 4479.0 | 0.0175 | |
| 5323.0 | 0.01609 | |
| 6325.0 | 0.01473 | |
| 7517.0 | 0.01342 | |
| 8932.0 | 0.01217 | |
| 10610.0 | 0.011 | |
| 12610.0 | 0.009909 | |
| 14990.0 | 0.008893 | |
| 17810.0 | 0.007957 | |
| 21160.0 | 0.007098 | |
| 25150.0 | 0.006314 | |
| 29890.0 | 0.005603 | |
| 35510.0 | 0.00496 | |
| 42200.0 | 0.004382 | |
| 50150.0 | 0.003862 | |
| 59590.0 | 0.003398 | |
| 70820.0 | 0.002985 | |
| 84150.0 | 0.002617 |
E = 21.3 – 100000