{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "T+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
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Sputtering of T+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.4112, "q": 0.0816, "mu": 0.9325, "epsilonL": 0.0008042, "Eth": 21.3}, "E_min": 21.3, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
21.3	0.0	
25.31	0.0005038	
30.07	0.0012	
35.74	0.002167	
42.47	0.003462	
50.47	0.00513	
59.97	0.007183	
71.26	0.009589	
84.68	0.01227	
100.6	0.0151	
119.6	0.01793	
142.1	0.02062	
168.9	0.02306	
200.7	0.02517	
238.4	0.02691	
283.3	0.02826	
336.7	0.02926	
400.1	0.0299	
475.5	0.03023	
565.0	0.03027	
671.4	0.03004	
797.8	0.02958	
948.1	0.0289	
1127.0	0.02804	
1339.0	0.02702	
1591.0	0.02586	
1890.0	0.02459	
2246.0	0.02324	
2670.0	0.02183	
3172.0	0.02039	
3770.0	0.01894	
4479.0	0.0175	
5323.0	0.01609	
6325.0	0.01473	
7517.0	0.01342	
8932.0	0.01217	
10610.0	0.011	
12610.0	0.009909	
14990.0	0.008893	
17810.0	0.007957	
21160.0	0.007098	
25150.0	0.006314	
29890.0	0.005603	
35510.0	0.00496	
42200.0	0.004382	
50150.0	0.003862	
59590.0	0.003398	
70820.0	0.002985	
84150.0	0.002617	
-----