{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Ge", "surface_phase": "pc", "species": {"text": "Xe+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
------------------------------------------------------------------------
Sputtering of Xe+ on Ge(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.0838, "q": 18.22, "mu": 1.729, "epsilonL": 1.358e-06, "Eth": 28.54}, "E_min": 28.54, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
28.54	4.457e-30	
33.71	0.0003185	
39.82	0.001441	
47.04	0.003958	
55.56	0.008835	
65.64	0.01752	
77.53	0.032	
91.58	0.05478	
108.2	0.08851	
127.8	0.1354	
150.9	0.1966	
178.3	0.2713	
210.6	0.3574	
248.8	0.4519	
293.9	0.552	
347.1	0.6557	
410.1	0.7623	
484.4	0.8716	
572.2	0.9841	
675.9	1.101	
798.4	1.222	
943.1	1.35	
1114.0	1.484	
1316.0	1.625	
1554.0	1.774	
1836.0	1.93	
2169.0	2.096	
2562.0	2.269	
3026.0	2.452	
3575.0	2.642	
4223.0	2.84	
4988.0	3.047	
5892.0	3.26	
6960.0	3.48	
8221.0	3.705	
9711.0	3.935	
11470.0	4.169	
13550.0	4.405	
16010.0	4.643	
18910.0	4.88	
22330.0	5.115	
26380.0	5.347	
31160.0	5.574	
36810.0	5.793	
43480.0	6.004	
51360.0	6.203	
60670.0	6.389	
71670.0	6.559	
84660.0	6.711	
-----