{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Ge", "surface_phase": "pc", "species": {"text": "(4He)+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
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Sputtering of (4He)+ on Ge(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.1446, "q": 0.2673, "mu": 1.506, "epsilonL": 0.0001411, "Eth": 26.23}, "E_min": 26.23, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
26.23	0.0	
31.04	0.0003811	
36.73	0.001424	
43.46	0.003391	
51.42	0.006609	
60.84	0.01133	
72.0	0.01761	
85.19	0.02519	
100.8	0.03355	
119.3	0.04205	
141.1	0.0502	
167.0	0.05766	
197.6	0.06435	
233.8	0.07027	
276.7	0.07551	
327.4	0.08017	
387.4	0.08434	
458.4	0.08807	
542.4	0.09142	
641.8	0.0944	
759.5	0.09702	
898.7	0.09928	
1063.0	0.1012	
1258.0	0.1026	
1489.0	0.1037	
1762.0	0.1043	
2085.0	0.1045	
2467.0	0.1041	
2919.0	0.1033	
3454.0	0.1019	
4087.0	0.1001	
4836.0	0.09774	
5722.0	0.09492	
6771.0	0.09167	
8011.0	0.08803	
9480.0	0.08406	
11220.0	0.07981	
13270.0	0.07537	
15710.0	0.07078	
18580.0	0.06613	
21990.0	0.06147	
26020.0	0.05686	
30790.0	0.05236	
36430.0	0.048	
43110.0	0.04382	
51010.0	0.03985	
60360.0	0.0361	
71420.0	0.0326	
84510.0	0.02934	
-----