{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Ge", "surface_phase": "pc", "species": {"text": "H+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
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Sputtering of H+ on Ge(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.3938, "q": 0.0245, "mu": 1.158, "epsilonL": 0.0003013, "Eth": 88.35}, "E_min": 88.35, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
88.35	0.0	
102.0	0.0001299	
117.7	0.0003524	
135.9	0.0006769	
156.9	0.001118	
181.1	0.001682	
209.0	0.002364	
241.3	0.003144	
278.5	0.003986	
321.5	0.004845	
371.1	0.005678	
428.3	0.006446	
494.4	0.007125	
570.7	0.007702	
658.8	0.008172	
760.4	0.008541	
877.8	0.008815	
1013.0	0.009004	
1170.0	0.009116	
1350.0	0.00916	
1558.0	0.009144	
1799.0	0.009072	
2076.0	0.008951	
2397.0	0.008786	
2767.0	0.008582	
3194.0	0.008342	
3686.0	0.008071	
4255.0	0.007775	
4912.0	0.007456	
5670.0	0.00712	
6545.0	0.006772	
7554.0	0.006414	
8720.0	0.006052	
10070.0	0.005689	
11620.0	0.005328	
13410.0	0.004973	
15480.0	0.004627	
17870.0	0.004291	
20630.0	0.003968	
23810.0	0.003658	
27490.0	0.003364	
31730.0	0.003086	
36620.0	0.002824	
42270.0	0.002578	
48800.0	0.002349	
56330.0	0.002135	
65020.0	0.001938	
75050.0	0.001755	
86630.0	0.001588	
-----