{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "Kr+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
------------------------------------------------------------------------
Sputtering of Kr+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.3, "q": 6.366, "mu": 1.764, "epsilonL": 3.964e-06, "Eth": 39.58}, "E_min": 39.58, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
39.58	0.0	
46.44	0.000109	
54.5	0.000502	
63.95	0.001394	
75.03	0.003144	
88.04	0.006321	
103.3	0.01178	
121.2	0.02077	
142.2	0.03493	
166.9	0.05627	
195.8	0.08687	
229.8	0.1284	
269.6	0.1814	
316.4	0.2449	
371.2	0.3167	
435.6	0.3936	
511.1	0.4726	
599.7	0.5518	
703.7	0.6299	
825.7	0.7066	
968.9	0.7821	
1137.0	0.857	
1334.0	0.9316	
1565.0	1.007	
1837.0	1.082	
2155.0	1.159	
2529.0	1.236	
2967.0	1.314	
3482.0	1.393	
4085.0	1.473	
4794.0	1.553	
5625.0	1.634	
6600.0	1.714	
7744.0	1.793	
9087.0	1.871	
10660.0	1.947	
12510.0	2.021	
14680.0	2.092	
17230.0	2.159	
20210.0	2.222	
23720.0	2.28	
27830.0	2.333	
32650.0	2.379	
38310.0	2.418	
44960.0	2.449	
52750.0	2.472	
61900.0	2.486	
72630.0	2.49	
85220.0	2.483	
-----