{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "Si+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
------------------------------------------------------------------------
Sputtering of Si+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.6726, "q": 2.695, "mu": 1.758, "epsilonL": 2.435e-05, "Eth": 20.04}, "E_min": 20.04, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
20.03	0.0	
23.84	7.684e-05	
28.36	0.0003621	
33.75	0.001031	
40.15	0.002389	
47.77	0.00494	
56.84	0.009475	
67.62	0.01717	
80.46	0.02965	
95.73	0.04888	
113.9	0.07683	
135.5	0.1148	
161.2	0.1624	
191.8	0.2178	
228.3	0.2774	
271.6	0.3378	
323.1	0.3963	
384.5	0.4515	
457.4	0.503	
544.2	0.5513	
647.5	0.5968	
770.4	0.6401	
916.7	0.6816	
1091.0	0.7216	
1298.0	0.7602	
1544.0	0.7975	
1837.0	0.8333	
2186.0	0.8674	
2600.0	0.8998	
3094.0	0.93	
3681.0	0.9578	
4380.0	0.9828	
5211.0	1.005	
6200.0	1.023	
7377.0	1.037	
8777.0	1.048	
10440.0	1.053	
12430.0	1.054	
14780.0	1.049	
17590.0	1.039	
20930.0	1.024	
24900.0	1.003	
29630.0	0.9766	
35250.0	0.9456	
41940.0	0.9101	
49900.0	0.8707	
59370.0	0.828	
70640.0	0.7827	
84050.0	0.7356	
-----