{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "N+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
------------------------------------------------------------------------
Sputtering of N+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.4888, "q": 1.437, "mu": 1.797, "epsilonL": 7.199e-05, "Eth": 16.7}, "E_min": 16.7, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
16.7	0.0	
19.94	0.0001361	
23.81	0.0006644	
28.44	0.001934	
33.96	0.004542	
40.56	0.009427	
48.44	0.01794	
57.85	0.03175	
69.08	0.05248	
82.5	0.08094	
98.52	0.1164	
117.7	0.1565	
140.5	0.1978	
167.8	0.2377	
200.4	0.2745	
239.3	0.3077	
285.8	0.3376	
341.3	0.3646	
407.6	0.3894	
486.8	0.4124	
581.3	0.4338	
694.3	0.4539	
829.1	0.4726	
990.1	0.4899	
1182.0	0.5058	
1412.0	0.52	
1686.0	0.5325	
2014.0	0.5431	
2405.0	0.5515	
2872.0	0.5575	
3430.0	0.561	
4096.0	0.5618	
4892.0	0.5596	
5842.0	0.5545	
6977.0	0.5464	
8332.0	0.5353	
9951.0	0.5212	
11880.0	0.5044	
14190.0	0.4851	
16950.0	0.4636	
20240.0	0.4403	
24170.0	0.4156	
28870.0	0.3899	
34470.0	0.3636	
41170.0	0.3372	
49160.0	0.3109	
58710.0	0.2853	
70120.0	0.2604	
83740.0	0.2367	
-----