{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "(3He)+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
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Sputtering of (3He)+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.3065, "q": 0.1823, "mu": 1.395, "epsilonL": 0.0003858, "Eth": 21.41}, "E_min": 21.41, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
21.41	0.0	
25.43	0.0003432	
30.22	0.001188	
35.91	0.002718	
42.66	0.00518	
50.69	0.008798	
60.23	0.01368	
71.57	0.0197	
85.04	0.02651	
101.0	0.03358	
120.1	0.0404	
142.7	0.0466	
169.5	0.05199	
201.4	0.05653	
239.3	0.06029	
284.3	0.06336	
337.8	0.06581	
401.4	0.06773	
477.0	0.06917	
566.7	0.07016	
673.4	0.07074	
800.1	0.0709	
950.7	0.07066	
1130.0	0.07003	
1342.0	0.06901	
1595.0	0.06762	
1895.0	0.06587	
2252.0	0.06378	
2675.0	0.06139	
3179.0	0.05874	
3777.0	0.05587	
4488.0	0.05282	
5332.0	0.04966	
6336.0	0.04642	
7528.0	0.04316	
8945.0	0.03993	
10630.0	0.03675	
12630.0	0.03366	
15010.0	0.0307	
17830.0	0.02789	
21180.0	0.02523	
25170.0	0.02274	
29910.0	0.02043	
35540.0	0.01829	
42220.0	0.01633	
50170.0	0.01454	
59610.0	0.01291	
70830.0	0.01144	
84160.0	0.01011	
-----