{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "D+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
------------------------------------------------------------------------
Sputtering of D+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.5326, "q": 0.0569, "mu": 1.654, "epsilonL": 0.0008312, "Eth": 24.54}, "E_min": 24.54, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
24.54	0.0	
29.08	9.527e-05	
34.46	0.0004021	
40.83	0.001038	
48.38	0.002147	
57.32	0.003849	
67.92	0.006147	
80.47	0.008871	
95.35	0.01171	
113.0	0.01436	
133.9	0.0166	
158.6	0.01836	
187.9	0.01969	
222.7	0.02064	
263.9	0.02129	
312.6	0.02169	
370.4	0.02188	
438.9	0.02191	
520.1	0.02178	
616.2	0.02151	
730.2	0.02111	
865.2	0.02059	
1025.0	0.01997	
1215.0	0.01925	
1439.0	0.01845	
1705.0	0.01758	
2021.0	0.01666	
2394.0	0.01569	
2837.0	0.0147	
3361.0	0.0137	
3983.0	0.0127	
4719.0	0.01172	
5591.0	0.01077	
6625.0	0.009847	
7850.0	0.008968	
9301.0	0.008136	
11020.0	0.007354	
13060.0	0.006625	
15470.0	0.00595	
18330.0	0.005327	
21720.0	0.004757	
25740.0	0.004236	
30500.0	0.003764	
36140.0	0.003337	
42820.0	0.002952	
50730.0	0.002606	
60110.0	0.002297	
71230.0	0.002021	
84400.0	0.001775	
-----