{"process": "Sputtering", "process_types": [{"abbreviation": "MPS", "description": "Physical Sputtering"}, {"abbreviation": "MSP", "description": "Sputtering"}], "surface": "Si", "surface_phase": "pc", "species": {"text": "H+", "charge": 1}, "temperature": 300, "comment": "Eckstein equation (2) is incorrect; use formula given on p.18 of APID-7B", "refs": [{"id": 144, "authors": "W. Eckstein", "title": "Sputtering Yields. In: Sputtering by Particle Bombardment", "journal": "Topics in Applied Physics", "volume": "110", "page_start": "", "page_end": "", "article_number": "", "year": 2007, "note": "Springer, Berlin, Heidelberg", "doi": "https://doi.org/10.1007/978-3-540-44502-9_3", "bibcode": "", "url": ""}]}
------------------------------------------------------------------------
Sputtering of H+ on Si(pc) at 300 K
{"fit_function": "SPTEEX", "coeffs": {"lambda": 0.4819, "q": 0.0276, "mu": 0.9951, "epsilonL": 0.0008597, "Eth": 49.79}, "E_min": 49.79, "E_max": 100000}
angle = 0.0 deg
E /eV	P	
49.79	0.0	
58.15	0.0002799	
67.92	0.0006721	
79.32	0.001195	
92.64	0.001858	
108.2	0.002655	
126.4	0.003562	
147.6	0.004539	
172.3	0.005531	
201.3	0.006484	
235.1	0.007351	
274.5	0.008098	
320.6	0.008708	
374.5	0.009176	
437.3	0.009506	
510.8	0.009709	
596.5	0.009799	
696.7	0.009788	
813.7	0.00969	
950.3	0.009517	
1110.0	0.009279	
1296.0	0.008988	
1514.0	0.008652	
1768.0	0.008281	
2065.0	0.007882	
2411.0	0.007464	
2816.0	0.007033	
3289.0	0.006595	
3841.0	0.006158	
4486.0	0.005725	
5240.0	0.005302	
6119.0	0.004891	
7147.0	0.004496	
8347.0	0.004119	
9748.0	0.003762	
11380.0	0.003425	
13300.0	0.00311	
15530.0	0.002817	
18140.0	0.002545	
21180.0	0.002294	
24740.0	0.002063	
28890.0	0.001852	
33740.0	0.001659	
39410.0	0.001484	
46020.0	0.001325	
53750.0	0.001181	
62770.0	0.001051	
73310.0	0.0009346	
85620.0	0.0008297	
-----